Finwave

Finwave Semiconductor is a semiconductor company developing Gallium Nitride on Silicon (GaN-on-Si) RF devices for 5G, 6G, and beyond. The company’s patented technology brings the power of Moore’s Law and scaling to RF GaN devices, offering higher performance and energy efficiency than legacy GaAs HBT and pHEMT technologies. Finwave’s product portfolio includes E-Mode GaN Power Amplifiers and High Power Broadband RF Switches, which serve critical RF front-end functions in every communication system. The company’s patented approach for linearizing power amplifiers and low noise amplifiers at the device level achieves higher linearity by reducing memory effects from electron trapping and employing a novel device-level power combining approach. This improves PA efficiency at backoff conditions required by high-order modulation schemes and enables simpler, power-saving digital pre-distortion (DPD) algorithms. Applications span cellular infrastructure (base station design), handsets, satellites, military and aerospace, test and measurement, medical, and automotive (RADAR and communication systems). Finwave’s evaluation kits and samples are available, with devices qualified and in stock at major global distributors. Founded in 2012 by MIT professor Tomas Palacios and headquartered in Waltham, Massachusetts, the company has raised approximately $41.5 million in Series B funding. Investors include Fine Structure Ventures, Soitec, Safar Partners, Engine Ventures, GF, In-Q-Tel, Foothill Ventures, and Alumni Ventures.